Efficient suppression of back electron/hole recombination in cobalt phosphate surface-modified undoped bismuth vanadate photoanodes
نویسندگان
چکیده
Department of Chemistry, Imperial Colle London, SW7 2AZ, UK. E-mail: j.durrant@im Laboratory for Molecular Engineering of O Chemical Sciences and Engineering, Écol (EPFL), Station 6, CH H4 565, Lausanne 10 † Electronic supplementary information (E SEM images of CoPi-modied and unmo J–V curves, transient absorption t resu measured as a function of excitation inten Cite this: J. Mater. Chem. A, 2015, 3, 20649
منابع مشابه
Efficient suppression of back electron/hole recombination in cobalt phosphate surface-modified undoped bismuth vanadate photoanodes† †Electronic supplementary information (ESI) available: XRD characterization and SEM images of CoPi-modified and unmodified BiVO4, continuous illumination J–V curves, transient absorption fit results, and transient absorption decays measured as a function of excitation intensities. See DOI: 10.1039/c5ta05826k Click here for additional data file.
In this paper, we compared for the first time the dynamics of photogenerated holes in BiVO4 photoanodes with and without CoPi surface modification, employing transient absorption and photocurrent measurements on microsecond to second timescales. CoPi surface modification is known to cathodically shift the water oxidation onset potential; however, the reason for this improvement has not until no...
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تاریخ انتشار 2015